Comparative Study of Low-Field Mobilities in Double- and Single- Gate Ultra-Thin Body SOI for Different Substrate Orientations
نویسندگان
چکیده
منابع مشابه
Mobility for High Effective Field in Double-Gate and Single-Gate SOI for Different Substrate Orientations
1. Abstract Low-field mobilities for (100) and (110) substrate orientations in single-gate (SG) and double-gate (DG) operation modes are compared. It is argued that for the same gate voltage twice as high carrier concentration in DG ultra-thin body (UTB) SOI as compared to the SG mode leads to a higher relative occupation of primed subband ladder for (100) substrate orientation. Efficient scatt...
متن کاملMOBILITY MODELING IN SOI FETS FOR DIFFERENT SUBSTRATE ORIENTATIONS AND STRAIN CONDITIONS SHORT TITLE: MOBILITY MODELING IN SOI FETs
Conduction band modification due to shear stress is investigated. Mobility in singleand double-gate SOI FETs is modeled for Silicon thin body orientation (001) and (110) under general stress conditions. Decrease of conductivity mass induced by uniaxial [110] tensile stress leads to mobility enhancement in the stress direction in ultra-thin body SOI MOSFETs.
متن کاملNano Scale Single and Double Gate SOI MOSFETs Structures and Compression of Electrical Performance Factors
With the scaling of MOSFETs in to sub-100nm regim, Silicon – on – Insulator (SOI), single gate (SG) and double gate (DG) MOSFETs are expected to replace tradional bulk MOSFETS. These novel MOSFETs devices will be strong contenders in RF applications in wireless communication market. This work is concerned about the device scaling and different design structures of nano scale SOI MOSFETs. The co...
متن کاملEffectiveness of Strain Solutions for Next-Generation MOSFETs
Permission to make digital or hard copies of all or part of this work for personal or classroom use is granted without fee provided that copies are not made or distributed for profit or commercial advantage and that copies bear this notice and the full citation on the first page. To copy otherwise, to republish, to post on servers or to redistribute to lists, requires prior specific permission....
متن کاملDeconvoluted Si 2p Photoelectron Spectra of Ultra thin SiO2 film with FitXPS method
The main impetus for our research is provided by the growing interest worldwide in ultra thin silicon dioxide on silicon based nano devices. The obvious need for better knowledge in the ultra thin gate silicon dioxides, is motivated both by interests in fundamental research and phenomenology as well as by interests in possible applications, which can be found with better fitting of experimental...
متن کاملذخیره در منابع من
با ذخیره ی این منبع در منابع من، دسترسی به آن را برای استفاده های بعدی آسان تر کنید
عنوان ژورنال:
دوره شماره
صفحات -
تاریخ انتشار 2006